smak plastic-encapsulate diodes features i o 1a vrrm high surge current capability applications rectifier marking polarity: color band denotes cathode glass passivated chip HD20G 1 h igh diode semiconductor smak notes: thermal resistance from junction to ambient and from junction to lead mounted on p.c.b. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copp er pad areas HD20G 2000v item symbol unit conditions repetitive peak reverse voltage vrrm v average forward current i f(av) a 60hz half-sine wave, resistance load,ta=75 1 surge(non-repetitive)forward current i fsm a 60hz half-sine wave,1 cycle,ta=25 30 junction temperature t j -55~+150 storage temperature t stg -55 ~ +150 2000 HD20G item max peak forward voltage v fm v i fm =1a 2.0 peak reverse current i rrm1 a vrm=vrrm t a =25 5 i rrm2 t a =125 50 symbol unit conditions 1400 v rms v maximum rms voltage
typical characteristics 2 h igh diode semiconductor fig.4:typical reverse characteristics voltage(%) ir(ua) tj=25 tj=125 tj=100 0.01 0.1 0 20 40 60 80 100 1.0 10 100 1000 0 0 . 2 0 . 4 0 . 6 1 . 0 50 1 0 0 150 fig.1: forward current derating curve io(a s ingle phase half wave 60hz resisteve or inductive load 0.375''(9.5mm) lead length ta () 0 0 . 8 ifsm(a) number of cycles fig.2: maximum non-repetit ive forward surge current 8.3ms single half sine wave jedec method 1 2 10 20 100 6 12 18 24 30 fig.3: typical forward characteristics 0.8 1.6 2.4 3.2 4 4.4 0.002 0.02 0.2 4 2 t j =25 c pulse width=300 m s 1%duty cycle if(a) vf(v)
3 jshd jshd h igh diode semiconductor smak smak 0.106(2.70) 0.096(2.45) 4.12 1.8
4 h igh diode semiconductor reel taping specifications for surface mount dev ices- sma
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